The 2n3055 is a npn epitaxialbase planar transistor that normally comes encapsulated in a metal jedec to3 package. Understanding 2n3055 transistor spec sheet bright hub. It could be used for switching in the 50 khz range. Free packages are available maximum ratings rating symbol value unit collector. These devices can also be used in power switching circuits such as converters or inverters.
Preferred devices are motorola recommended choices for future use and best overall value. Semiconductor technical data order this document by 2n3055 d motorola, inc. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. Motorola, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. It was introduced in the early 1960s by rca using a hometaxial power transistor process, transitioned to an epitaxial base in the mid1970s.
Ldmos rf power field effect transistor 90 w, 869960 mhz. Complementary power transistors stmicroelectronics. Complementary low voltage transistor stmicroelectronics. Microsemi corporation, 2n3055, npn power silicon transistor. The 2n3055 is a silicon epitaxialbase npn transistor in jedec to3 metal case. Mj2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted.
January 2008rev 71772n3055mj2955complementary power transistorsfeatures low collectoremitter saturation voltage datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The 2n3055 is a silicon epitaxialbase planar npn transistor mounted in jedec to3 metal case. Like any other transistor 2n3055 has three pins namely emitter, base and collector. The 2n3055h is a silicon power base transistor for high power audio, seriespass power supplies, diskhead positioners and other linear application. Power transistors 15a,50v,115w mospec semiconductor. Transistor 2sa 2sb 2sc 2sd 2n3055 npn transistor toshiba 2n3055 toshiba transistors 2sa 2n3055 st pnp vhf transistor hf vhf power amplifier module transistor. In this post we comprehensively discuss the pinout function, electrical specification, and application designs for the power transistor 2n3055.
It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity. Tip3055d tip3055 npn, tip2955 pnp complementary silicon power transistors designed for general. The basic application range include power switching, high fidelity amplification. Motorola 15 ampere complementary silicon power transistors 60, 120 volts 115, 180 watts,alldatasheet, datasheet, datasheet.
Mospec power transistors 15a,50v,115w,alldatasheet, datasheet, datasheet search site for. Transistors are in stock with sameday shipping at mouser electronics from industry leading manufacturers. The 2n3055 is a power bipolar transistor designed to handle high power loads in the range of 100 v, and 15 amps. It is intended for power switching circuits, series and shunt regulators, output. January 2008rev 71772n3055mj2955complementary power transistorsfeatures low collectoremitter saturation voltage datasheet search, datasheets, datasheet search site for electronic components. The 2n3055 is a silicon npn power transistor intended for general purpose applications. Diodes and transistors pdf 28p this note covers the following topics. Lm317 lm339 max232 ne555 lm324 8051 7805 2n3055 lm358 2n2222 74ls8 tda7294 tl431 irf540 1n4148 datasheets found. Absolute maximun rating2n3055 mj2955271absolute maximun ratingtable 2. The tip31c is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard tip31c that make this device suitable for audio, power linear. Complete technical details can be found at the datasheet give at the end of this page. The 2n6673 is a 15 mhz device so it is superior to the 2n3055. Mouser is an authorized distributor for many transistor manufacturers including.
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